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Cu/Au bumping capability |
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Unique features for Cu bumping |
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Unique N2 chambers design |
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Retrofit kit at bond head to ensure oxide-free FAB |
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Cu FAB formation |
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Thermosonic (TS) bonding method |
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Short bumping time of 20 bumps per sec or 50 ms
per bump |
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138 kHz transducer for low temperature process
on wafers |
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Bumping accuracy at ±3.5 µm @ 3 sigma |
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Large wafer handling - 12” max. |
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Complete wafer protection |
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Thermal shock prevention by pre-heat and
post-bond stage |
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Independently controlled heater with 4
heater rods to ensure stable and
consistent temperature distribution |
