[ HOME ] [ UP ] [ FEEDBACK ] [ CONTENTS ] [ SEARCH ]
Silicon

[ Thermotech TE™ ] [ Silvertech PT-1™ Expoxy ] [ PureCon™ for UHV ] [ UBM™ Under Bond Metalization ] [ Silicon ] [ Sil-R™ ] [ Sil-X™ Optical Media Alloy ] [ Sil-XL™ ] [ EVAPro™ ] [ SFG™ ] [ ME™ ] [ VCT™ ] [ HSC™ ]
SITE LINKS

 

WILLIAMS Advanced Materials 

Williams Advanced Materials
SILICON 

OEM qualified supplier with global support.

GENERAL 

Silicon is the second most abundant element in nature, accounting for about 25.7% of the earth's crust. It can be found in Group IVB of the Periodic Table. Williams produces silicon from crystal growing techniques. The primary sputtering techniques for silicon are, RF Sputtering and DC Magnetron.

BACKING PLATES AND BONDING 

Williams provides Molybdenum and alternative backing plate material for all major metallizing equipment. Our state-of-the-art bonding centers are located globally, offering standard metallic target bonding and high temperature solder bonding for greater disc metallizing throughput. Void free solder bonding verified by ultrasonic inspection.

CHEMICAL PROPERTIES  ELECTRICAL/PHYSICAL PROPERTIES 

Atomic Symbol:

Si

Density:

2.33 g/cm3

Atomic Number:

14

Atomic Weight:

28.086
Crystal Structure: FCC

Electrical Resistively:

0.005-0.020 ohm-cm

Thermal Conductivity:

149 W m-1 K-1

Coefficient of Thermal Expansion:

14

Atomic Weight:

2.33 PPM/K
Hardness (Knoop): 1150 Kg/mm2
HAZARDOUS MATERIAL IDENTIFICATION GUIDE  VAPOR PRESSURE 

Health

Flammability Reactivity PPE

2

2 1 J

10 -3 Torr

1 Torr 760 Torr
1477 C 2052 C 2357 C
RELATED TO THIS ITEM  

+ Target Bonding
 + Optical Media Targets for Storage Applications

One-Stop Shopping - Sputtering Targets, Backing Plates, Bonding and Recycling too!
[ HOME ] [ UP ]
Send mail to tish.ward@bita.se with questions or comments about this web site.  
Copyright © 1998 BITA ELEKTRONIK SVENSKA AB  
Last modified: 2011-11-12