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UBM™ Under Bond Metalization

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WILLIAMS Advanced Materials 

Williams Advanced Materials
UBM - UNDER BOND METALIZATION 

High purity, low alkali materials ensure excellent film uniformity and reduced particulation.

GENERAL 

UBM™ grade thin film deposition materials have been engineered to optimize performance in wafer level packaging processes. Semiconductor companies have adopted flip chip packaging as a low cost, high volume assembly technology solution. UBM™ grade materials display a uniform, fine grain size that improves overall thin film uniformity. Gaseous impurities have also been further reduced, resulting in extremely consistent thin film electrical properties. All of this adds up to enhanced device performance and greater wafer yield.

MATERIAL DATA Purity Levels up to 99.999% 

Grain Size (Microns)

Non-Metallics
(C ppm) (O ppm) (H ppm) (N ppm)
Au <100 <30 <20 <5 <10
Cu <150 <10 <20 <5 <5
Al <100 <10 <10 <5 <5
Ti <50 <100 <500 <5 <50
Cr <250 <50 <100 <200 <50
Al/Cu   <100 <10 <50 <5 <5
Ni/V <100 <50 <100 <50 <50
Ni/W <100 <50 <100 <5 <50
W/Ti <250 <100 <600 <100 <50
Cr/Cu <250 <50 <1000 <10 <500

RELATED TO THIS ITEM  

+ Analytical Capabilities
+ Thin Film Manufacturing Capabilities
 + Thin Film Deposition Mat. for the Semicond. Market
bullet Fine Grain Size
bullet Low Gaseous Impurities
bullet Film Uniformity Improvement
bullet Consistent Electrical Properties 
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Last modified: 2010-08-11