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High Temperature Cure Ovens

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YIELD Engineering Systems Inc.

YES home page

YES HIGH TEMPERATURE CURE OVENS  MANUAL SYSTEMS 

YES high temperature cure ovens are designed to provide a controlled ramp curing process for temperatures up to 450ºC in an oxygen-free environment. In addition, YES ovens provide a cleaner process in a controlled environment, so you’ll get higher yields. Our ovens offer a unique cooling package to reduce your process time and utilize laminar flow technology, so wafers in our ovens stay clean. (Automatic systems - see below)

BENEFITS 

Yield Engineering System’s YES 450PB Series
Yield Engineering System’s YES 450PB Series

Critical steps in any cure process include complete removal of residual solvents, uniform temperature distribution, pressure control, ability to maintain dry inert atmosphere, and control of heating and cooling rates. Our systems achieve this plus particle reduction in most applications.

APPLICATIONS
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Low-K dielectric cure

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Polyimide bake

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BCB cure

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Copper anneal

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Low-K dielectric cure

INFORMATION  
to Product Specification Chart
 
to YES Info Page
SOFTWARE OPTIONS  
to Process Management Software

Yield Engineering System’s YES 450PB Series product line incorporates input from major semiconductor process engineers and manufacturers. As a result, these high temperature vacuum cure ovens offer vertical laminar flow paired with a unique cooling package.
The vertical laminar flow carries particulates away so they won’t deposit onto wafers. Directing the airflow so it streams from the top of the system and out the bottom ensures there’s no air turbulence, allowing particle reduction in most applications. The YES 450PB Series cooling package only uses air, no water. The cooling package allows for faster cooling times as well as temperature uniformity control throughout the process. The design allows the process engineer total control of ramp down rates within the tool’s specifications.

ADDITIONAL FEATURES  

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Vacuum/Nitrogen purges to remove almost all oxygen before processing starts.

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Pre-heated Nitrogen at the required oven temperature to heat the process atmosphere surrounding the wafers.

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Controlled ramp temperature up from ambient to operational temperature at up to 20 degrees per minute C.

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Ability to achieve faster, uniform solvent evaporation, which reduces process time and increases product throughput. (Low pressure, laminar flow creates higher boundary layer diffusion rates and more uniform bulk gas solvent concentration. Faster solvent evaporation eliminates dwell steps. required for competing atmospheric processes).

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Control of the ramp down temperature to the selected temperature before removing product.

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Oxygen levels of below 10 ppm during processing. This makes for a better film, so polyimide bonds aren’t weakened. Controlled convection cooling to reduce process cooling time and improve low temperature control stability.

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Adjustable air mixing ratio for chamber cooling to adapt the tool for best performance over a broad range of operating temperatures.

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Lower nitrogen usage for vacuum chamber cycle purge process.

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Process control management software (option).

 SPECIFICATION   HARDWARE 

MODEL 6-2P-CP

MODEL 8-2P-CP

MODEL 12-2P-CP

Clean Room Compatibility

Class 10

Wafer Size

Up to 150mm

Up to 200mm

Up to 300mm

Capacity

Up to 50 Wafers/Batch

Operation Temperature

Ambient to 450°C

N2 Flow Rate

1 SCFM

Interior Chamber Dimensions

10.8" ID X 22.0" D

14.4" ID (Barrel) x 26.2" D

21.0" ID X 26.0" D

Chamber Process Area

6.4"W X 7.3"H X 14.0"D

9.4"W x 18.1"D x 9.8"H

14.8"W X 22.3"D X 14.2"H

Overall System Dimen.

23.7"W X 40.5"D X 27.3"H

27.2"W x 43.2"D x 30.8"H

33.8"W X 48.9"D X 37.4"H

Control Console Dimen.

23.4"W X 37.8"D X 9.3H

Chamber Material

316L Stainless Steel

Process Gas Inputs

1 Standard, up to 3 Optional

Mass Flow Controllers

Optional, up to 3 for Gas Mixing

Laminar Flow Filter

100 Micron Mott Plate Filter

Cleanliness

Particle Reduction in Most Applications

 SPECIFICATION   SOFTWARE

No. of Recipes

8 Temperature Profiles

No. of Steps for ea. Recipe

16 Program Steps

 SPECIFICATION   PERFORMANCE

Uniformity of Temperature

±3.5°C During Dwell after Stabilization Period

±3.5°C During Dwell after Stabilization Period

±5°C During Dwell after Stabilization Period

Max. Heat-Up Rate

16°C/min

12°C/min

8°C/min

Max. Cool-Down Rate

16°C/min

7°C/min

4°C/min

Oxygen Concentration

10ppm Over Background

YES HIGH TEMPERATURE CURE OVENS  AUTOMATIC SYSTEMS 

The YES-PBV300 system is the latest addition to our line of high temperature vacuum cure ovens. YES-PBV300 incorporates the unique cooling system and laminar flow technology of the YES-450PB Series, as well as offers optional chemical vapor deposition (CVD) and plasma.

YES-PBV300 system
YES-PBV300 system

Combining CVD and/or plasma cleaning reduces steps and keeps your process clean. Wafers remain in the oven without exposure to atmosphere. YES-PBV300 is intended for applications that require accurate ramping temperature control with extremely low oxygen process concentrations, low particle addition, and/or controlled

APPLICATIONS 
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Surface preparation

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Polyimide bake

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BCB cure

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Copper anneal

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Copper oxide removal

INFORMATION  
to Product Specification Chart
 
to YES Info Page
SOFTWARE OPTIONS  
to Process Management Software
FEATURES  OPTIONS   
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Horizontal laminar flow for increased particle isolation and removal (for most cure processes, average particle addition is negative)

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Front touchscreen user interface for process control, recipe editing, process variable display, and maintenance operation

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Controlled gas composition

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Nitrogen purged dual o-ring door seal to eliminate oxygen leakage into chamber

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One process gas standard, additional available as an option

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Accelerated cooling rates with variable speed; forced convection cooling outside (exterior) of the vacuum chamber

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Chamber cooling air mixed with ambient air to reduce cooling air exhaust temperature

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Variable ambient air mixing ratio for maximum cooling performance

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Chemical vapor deposition (for silane surface conditioning needed for copper diffusion barrier deposition, copper oxide removal, copper oxidation barrier deposition, and porous low-k dielectric plasma damage repair applications)

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Plasma cleaning for surface preparation

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Second and third process gasses

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Mass flow controllers for all process gasses

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Continuous monitoring of process chamber vacuum exhaust oxygen concentration

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Downstream pressure control with CDG pressure measurement and variable vacuum throttle valve

INTEGRAL ENVIRONMENTAL FRONT END MODULE  

Automatic loading of product wafers into the YES-PBV300 takes place in an Integral Environmental Front End Module (EFEM). The EFEM can accept either a 300mm FOUP or a 200mm cassette in a FOUP adapter. With the appropriate optional features, the EFEM can accept automated FOUP loading from an automated material handling system.

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Last modified: 2009-11-02