HOME ] UP ] FEEDBACK ] CONTENTS ] SEARCH ]
HiDep

DFS-200 ] [ HiDep ] HiEtch ]
SITE LINKS

 

 

BMR TECHNOLOGY CORP.

BMR Technology Corp.

HiDep PLASMA-ENHANCED CVD  
BMR HiDep PLASMA-ENHANCED CVD
bullet

Dielectric Film below 100 degree C

bullet

Modular Hardware Design

bullet

Applications

bullet

Good quality dielectric films below 100 degr. C

bullet

Control of conformality

bullet

Pin hole free films 

bullet

Easy stress control 

bullet

Low hydrogen concentration

bullet

Improved device performance

bullet

Gap filling

bullet

Good wafer permeability 

bullet

Thick film deposition 

bullet

Superior film uniformity

HARDWARE SPECIFICATIONS 

The HiDep™ System from BMR Technology opens a new horizon for plasma-enhanced chemical vapor deposition (PECVD). BMR's new high quality dielectric films at temperatures below 100 with high deposition rates based on BMR's patented Hybrid Electromagnetic Energy Coupling technology (US Patent 6310577 B).
Conventional PECVD Processes typically need operating temperatures in excess of 400 to produce films with the viable deposition rates. In typically PECVD systems, as the morphology and integrity also decrease rapidly due to pinholes.
BMR's HiDep™ generates highly dissociated plasmas by using time-varying magnetic fields excited by a specially designed antenna array at radio frequency (RF).

This proprietary antenna array provides the HiDep™ plasma with high power efficiency over a wide range of operating pressure and power settings. A special magnetic field is localized at the chamber circumference to further enhance electron confinement and hence deposition properties.
Additional RF power can be applied both to the top electrode and to the wafer chuck. These additional RF powers are useful in controlling film characteristics such as used for an effective chamber cleaning process.
Process gases are introduced through top and side gas injectors with an embedded gas diffuser to ensure an advanced uniform gas flow.

DIELECTRIC FILMS BELOW 100o

The highly dissociated plasmas of HiDep™ significantly lower required process temperature for excellent quality dielectric films such as SIO2 and Si3N4 — below 100oC. This capability enables dielectric film deposition on temperature sensitive materials, including polymers.
A Si3N4 film deposited at 50oC  shows wet etch rate by BOE comparable to the films deposited typically at 400 via conventional PECVD methods.

MODULAR HARDWARE DESIGN 

HiDep™ is designed in a modular fashion making the transitions easy from initial process development to pilot line and onto mass production.
The extensive engineering experience of BMR;s technical team in semiconductor equipment industry makes the HiDep™ a system systematically designed for highly reliable operation.
The HiDep™ system provides many process advancements to meet your toughest film requirements not previously possible in the conventional system.

APPLICATIONS 

The capability of depositing dielectric films at substantially low temperature with excellent quality opens a new application of plasma CVD films, including a wide array of microelectronic devices: 

bullet

GaAs, Inp Semiconductors

bullet

MEMS

bullet

Hard disk drive head

bullet

LED

bullet

Optical Fiber

bullet

Solar Cells

bullet

Small Graphic Displays

 

GOOD QUALITY DIELECTRIC FILMS BELOW 100o

HiDep™'s substantially lower process temperature enables deposition of dielectric films on extremely temperature sensitive substrates such as plastic, polymers, magnetic and compound semiconductor materials.

 
CONTROL OF CONFORMALITY 

Conformality of films can be controlled by adjusting the energy of ions bombarding the substrate surface. The film can be deposited either conformally, or directionally, depending on the process requirements. Fig. 1 shows Si3N4 film can be deposited either conformally (Fig.-1.a) or directionally (Fig.-1.b).

BMR Conformal and Directional Deposition

 
PIN HOLE FREE FILMS  EASY STRESS CONTROL 

Even with low process temperature, HiDep™ exhibits exceptionally low pin hole density compared to conventional PECVD processes.

With the HiDep™, targeted film stresses can be easily controlled by: a) controlling ion energy, and b) adjusting wafer height from the plasma. While increasing the energy of ions tend to make films more compressive, increasing gap distance between bottom and top electrode makes the film more tensile. BMR's technology allows adjustment of ion energy and wafer height; while the HiDep™ deposited dielectric films have the desired minimal stress.

LOW HYDROGEN CONCENTRATION 

Hydrogen content of dielectric films can be substantially lower than that of conventional PECVD process

IMPROVED DEVICE PERFORMANCE (click on picture)

IMPROVED DEVICE PERFORMANCE 

HiDep™'s capability of depositing excellent quality films provides overall improvement of device parameters. For instance, the breakdown voltage (BV) in PHEMPT devices show 2X higher breakdown voltage with a 150  HiDep™ process compared to films deposited by PECVD at 250 . (Fig.-2).

 

(click on picture, lo enlarge)
GAP FILLING  

GAP FILLING (click on picture)

The capability of controlling ion energy with the HiDep™ system enables filing of high aspect ratio gaps which has not been possible with conventional PECVD technology. (Fig.-3).

 

(click on picture, lo enlarge)
GOOD WAFER PERMEABILITY 

GOOD WAFER PERMEABILITY (click on picture)

Si3N4 film with thickness of 200nm deposited below 85 show water permeability better than 10-2gm/m2 - day at the temperature of 65 and the FH of 100%. This excellent water permeability capability makes HiDep™ ideal to deposit protective film layers for multitude of electronics devices. (Fig.-4).

 

(click on picture, lo enlarge)
THICK FILM DEPOSITION  SUPERIOR FILM UNIFORMITY 

Maximum film thickness that can be deposited by the conventional PECVD is approximately 5 microns. Above that, particle becomes a progressively more serious problem. With BMR technology, the HiDep™ can deposit films greater than 20micron without chamber cleaning

A uniform flow pattern of injected processes gases coupled with a uniform plasma results in superior film uniformity. Typical film thickness uniformity over 6 inch wafer shows better than ±1% uniformity. Refractive index results typically exhibit better than ±0.5% uniformities.

HOME ] UP ]
Send mail to info@bita.se with questions or comments about this web site.
Copyright © 1998 BITA ELEKTRONIK SVENSKA AB 
Last modified: 2016-08-22