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GAISER SMALL WIRE WEDGE INFORMATION   

1. SMALL WIRE BONDING WEDGES - GENERAL INFORMATION

Wedge bonding is a solid state process. The primary bonding parameters in wedge bonding are ultrasonic power, force and time. When bonding gold wire, the fourth parameter of heat is added. Wedge bonding joins two pieces of metal using a process of diffusion. The bonding wire is mechanically bonded to the die pad or package metallization by rubbing the surfaces of the wire and moralizations together.

This rubbing occurs by vibrating a clamped wedge at ultrasonic frequency while the wire is held under the bond foot of the wedge. Commonly called scrubbing, this rubbing disturbs any surface oxide film, exposes clean metallic surfaces and forms a metallurgical weld. This metallurgical weld is not degraded significantly by heat. 

Microwave diodes, transistors and GaAs devices generally have gold as their surface layer and have small bonding pads. Some of these bonding pads measure less than 0.002in./51 inches across and less than 0.004in./102 on center. The advantage

of wedge bonding over ball bonding is the ability to form bonds on such narrow closely spaced bond pads. Typical wire diameters for microwave applications range from 0.001in./25 to 0.0005in./13. Most microwave devices are wedge bonded with gold wire.

GTC Figure 40-1

Figure 1. Today's wedge bonding requirements include pad pitches of 0.0030in./76 and smaller. 

(Photo: courtesy of Integrated Reliability Services, Inc.; Device: courtesy of Spectrian).

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